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| inchange semiconductor product specification silicon npn power transistors BD943 description with to-220c package low collector saturation voltage high current capability applications for medium power linear and switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 22 v v ceo collector-emitter voltage open base 22 v v ebo emitter-base voltage open collector 7 v i c collector current 5 a p c collector dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -50~150
inchange semiconductor product specification 2 silicon npn power transistors BD943 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma; i b =0 22 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 7 v v cesat collector-emitter saturation voltage i c =2a; i b =0.2a 0.5 v v besat base-emitter saturation voltage i c =2a; i b =0.2a 1.2 v i cbo collector cut-off current v cb =22v; i e =0 50 a i ebo emitter cut-off current v eb =7v; i c =0 50 a h fe dc current gain i c =0.5a ; v ce =1v 85 475 f t transition frequency i c =0.25a ; v ce =10v 3 mhz inchange semiconductor product specification 3 silicon npn power transistors BD943 package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm) |
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